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MGW12N120D spec: Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D Samanlaisia
- MGW12N120
- Insulated gate bipolar transistor
- MGW12N120D
- Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D Datasheet ja Spec
Valmistaja : Motorola
Pakkauspäivämäärä : TO-247AE
Pins : 3
Lämpötila : Min -55 °C | Max 150 °C
Koko : 274 KB
Hakemus : Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D PDF Lataa