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MPS6512 spec: 4V, 350mW NPN silicon planar epitaxial transistor
MPS6512 Samanlaisia
- MPS6512
- 4V, 350mW NPN silicon planar epitaxial transistor
- MPS6512S
- 4V, 350mW NPN silicon planar epitaxial transistor
- MPS6513
- 4V, 350mW NPN silicon planar epitaxial transistor
- MPS6514
- 4V, 350mW NPN silicon planar epitaxial transistor
- MPS6515
- 4V, 350mW NPN silicon planar epitaxial transistor
- MPS6516
- 4V, 350mW PNP silicon planar epitaxial transistor
- MPS6517
- 4V, 350mW PNP silicon planar epitaxial transistor
- MPS6518
- 4V, 350mW PNP silicon planar epitaxial transistor
MPS6512 Datasheet ja Spec
Valmistaja : Micro Electronics
Pakkauspäivämäärä : TO-92A
Pins : 3
Lämpötila : Min -55 °C | Max 150 °C
Koko : 196 KB
Hakemus : 4V, 350mW NPN silicon planar epitaxial transistor
MPS6512 PDF Lataa