Path:OKDatasheet > Semiconductor Datasheet > Micro Electronics Datasheet > BD242B
BD242B spec: 4mW NPN silicon epitaxial base power transistor
BD242B Samanlaisia
- BD241
- 4mW NPN silicon epitaxial base power transistor
- BD241A
- 4mW NPN silicon epitaxial base power transistor
- BD241B
- 4mW NPN silicon epitaxial base power transistor
- BD242
- 4mW NPN silicon epitaxial base power transistor
- BD242A
- 4mW NPN silicon epitaxial base power transistor
- BD242B
- 4mW NPN silicon epitaxial base power transistor
BD242B Datasheet ja Spec
Valmistaja : Micro Electronics
Pakkauspäivämäärä : TO-220B
Pins : 3
Lämpötila : Min -55 °C | Max 150 °C
Koko : 107 KB
Hakemus : 4mW NPN silicon epitaxial base power transistor
BD242B PDF Lataa