Path:OKDatasheet > Semiconductor Datasheet > Micro Electronics Datasheet > 2N5367
2N5367 spec: 360mW PNP silicon transistor
2N5367 Samanlaisia
- 2N5307
- 400mW NPN darlington amplifier
- 2N5308
- 400mW NPN darlington amplifier
- 2N5367
- 360mW PNP silicon transistor
- 2N5367
- 360mW PNP silicon transistor
- 2N5368
- 500mW complementary silicon general purpose amplifier
- 2N5369
- 500mW complementary silicon general purpose amplifier
- 2N5370
- 500mW complementary silicon general purpose amplifier
- 2N5371
- 500mW complementary silicon general purpose amplifier
2N5367 Datasheet ja Spec
Valmistaja : Micro Electronics
Pakkauspäivämäärä : TO-92B
Pins : 3
Lämpötila : Min -55 °C | Max 150 °C
Koko : 62 KB
Hakemus : 360mW PNP silicon transistor
2N5367 PDF Lataa