| Osa Ei | Valmistaja | Hakemus |
|---|
| SMAJ85A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 85 V. |
| 3EZ68D4 | JGD | 3 W, silicon zener diode. Nominal voltage 68 V, current 11 mA, +-4% tolerance. |
| HER304 | JGD | 3.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 300V. |
| 1N5936B | JGD | 1.5 W, silicon zener diode. Zener voltage 30V. Test current 12.5 mA. +-5% tolerance. |
| SMAJ5.0CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 5.0 V. Bidirectional. |
| HER502 | JGD | 5.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 100V. |
| SMBJ33C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 36.7 V (min), 44.9 V (max). Test current 1.0 mA. Bidirectional. |
| SMBJ5926A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 11 V. Test current 34.1 mA. +-10% tolerance. |
| HER152G | JGD | 1.5 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 100V. |
| 1N5917B | JGD | 1.5 W, silicon zener diode. Zener voltage 4.7V. Test current 79.8 mA. +-5% tolerance. |
| ZMM55-A8V2 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 7.7-8.7 V. Test current 5 mA. +-1% tolerance. |
| RL202G | JGD | Glass passivated rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 2.0 A. |
| 1N4740D | JGD | 1W zener diode. Nominal zener voltage 10V. 1% tolerance. |
| 3EZ100D5 | JGD | 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-5% tolerance. |
| 1N986 | JGD | 0.5W, silicon zener diode. Zener voltage 110V. Test current 1.1mA. +-20% tolerance. |
| W01M | JGD | Single phase silicon bridge rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.5 A. |
| FS1D | JGD | 1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 200V. |
| F1A1G | JGD | 1.0 A glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 50 V. |
| MMBZ5227B | JGD | Surface mount zener diode. Nominal zener voltage 3.6V, test current 20.0mA. |
| SMAJ45 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 45 V. |
| SF11 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 1.0 A. |
| 3EZ4.7D1 | JGD | 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-1% tolerance. |
| ZMM5256C | JGD | Surface mount zener diode. Nominal zener voltage 30 V. Test current 4.2 mA. +-10% tolerance. |
| ZMM5256B | JGD | Surface mount zener diode. Nominal zener voltage 30 V. Test current 4.2 mA. +-5% tolerance. |
| 1N4128D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 60V. 1% tolerance. |
| P4KE10CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 10 V. Bidirectional. |
| SMBJ9.0CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 10.0 V (min), 11.1 V (max). Test current 1.0 mA. Bidirectional. |
| SMBJ5916A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 4.3 V. Test current 87.2 mA. +-10% tolerance. |
| W005M | JGD | Single phase silicon bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 1.5 A. |
| SMAJ64C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 64 V. Bidirectional. |
