| Osa Ei | Valmistaja | Hakemus |
|---|
| 1N4622D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 3.9V. 1% tolerance. |
| 1N4760 | JGD | 1W zener diode. Nominal zener voltage 68V. 10% tolerance. |
| SMBJ12A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 13.3 V (min), 14.7 V (max). Test current 1.0 mA. |
| UF4003 | JGD | Ultra fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A. |
| P6KE33 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 33 V. |
| 1N4126 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 51V. |
| P4KE16 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V. |
| SMBJ60C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 66.7 V (min), 81.5 V (max). Test current 1.0 mA. Bidirectional. |
| RC2005 | JGD | Single phase 2 A. Single bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 2 A. |
| FR103L | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
| BZX84C7V5 | JGD | 350mW zener diode, 7.5V |
| 1N983D | JGD | 0.5W, silicon zener diode. Zener voltage 82V. Test current 1.5mA. +-1% tolerance. |
| 1N5943C | JGD | 1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-2% tolerance. |
| 1N5544D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-1% tolerance. |
| 3EZ110D10 | JGD | 3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-10% tolerance. |
| 1N4750A | JGD | 1W zener diode. Zener voltage 27V. |
| 1N5933 | JGD | 1.5 W, silicon zener diode. Zener voltage 22V. Test current 17 mA. +-20% tolerance. |
| KBP208G | JGD | Single-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V. |
| 1N5947B | JGD | 1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-5% tolerance. |
| SMAJ64CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 64 V. Bidirectional. |
| 3EZ47D | JGD | 3 W, silicon zener diode. Nominal voltage 47 V, current 16 mA, +-20% tolerance. |
| 1N4749D | JGD | 1W zener diode. Nominal zener voltage 24V. 1% tolerance. |
| RL205 | JGD | Silicon rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 2.0 A. |
| 1N5914B | JGD | 1.5 W, silicon zener diode. Zener voltage 3.6V. Test current 104.2 mA. +-5% tolerance. |
| 3EZ4.3D5 | JGD | 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-5% tolerance. |
| 1N5932B | JGD | 1.5 W, silicon zener diode. Zener voltage 20V. Test current 18.7 mA. +-5% tolerance. |
| 1N4744 | JGD | 1W zener diode. Nominal zener voltage 15V. 10% tolerance. |
| HER108G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 1000V. |
| SMAJ6.0 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.0 V. |
| SMAJ160 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V. |
