| Osa Ei | Valmistaja | Hakemus |
|---|
| HER151G | JGD | 1.5 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 50V. |
| ZMM55-C6V8 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 6.4-7.2 V. Test current 5 mA. +-5% tolerance. |
| ES2G | JGD | 2.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 400 V. |
| HA18 | JGD | 1.0A, high efficiency rectifier. Max recurrent peak reverse voltage 1000V. |
| SS22 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current 2.0 A. |
| 1N983A | JGD | 0.5W, silicon zener diode. Zener voltage 82V. Test current 1.5mA. +-10% tolerance. |
| HER607G | JGD | 6.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 800V. |
| 1N992B | JGD | 0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-5% tolerance. |
| P4KE110C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V. Bidirectional. |
| SF16G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 1.0 A. |
| FR305 | JGD | 3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 600V. |
| HER607 | JGD | 6.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 800V. |
| SMAJ110 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 110 V. |
| 1N5950C | JGD | 1.5 W, silicon zener diode. Zener voltage 110 V. Test current 3.4 mA. +-2% tolerance. |
| 1N4108 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 14V. |
| P4KE33A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 33 V. |
| 1N4370C | JGD | 500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-2% tolerance. |
| 3EZ7.5D1 | JGD | 3 W, silicon zener diode. Nominal voltage 7.5 V, current 100 mA, +-1% tolerance. |
| SMBJ26CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 28.9 V (min), 31.9 V (max). Test current 1.0 mA. Bidirectional. |
| HER104L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 300V. |
| P6KE75C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 75 V. Bidirectional. |
| P6KE6.8C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 6.8 V. Bidirectional. |
| SMBJ64A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 71.1 V (min), 78.6 V (max). Test current 1.0 mA. |
| ZMM55-B30 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 28-32 V. Test current 5 mA. +-2% tolerance. |
| SR735 | JGD | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 35 V. Max average forward current 7.5 A. |
| ZMM55-B27 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 25.1-28.9 V. Test current 5 mA. +-2% tolerance. |
| 3EZ16D | JGD | 3 W, silicon zener diode. Nominal voltage 16 V, current 47 mA, +-20% tolerance. |
| KBP110G | JGD | Single-phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V. |
| SMAJ9.0CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 9.0 V. Bidirectional. |
| SMBJ7.0C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 7.78 V (min), 9.51 V (max). Test current 10.0 mA. Bidirectional. |
