| Osa Ei | Valmistaja | Hakemus |
|---|
| ZMM5243D | JGD | Surface mount zener diode. Nominal zener voltage 13 V. Test current 9.5 mA. +-20% tolerance. |
| 1N4732A | JGD | 1W zener diode. Zener voltage 4.7V. |
| 1N5956A | JGD | 1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-10% tolerance. |
| P6KE30 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 30 V. |
| SMBJ5927A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 12 V. Test current 31.2 mA. +-10% tolerance. |
| SF66 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 6.0 A. |
| KBU1000G | JGD | Single phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V. |
| RB155G | JGD | Miniature single phase 1.5 A. Glass passivated bridge rectifier. Max recurrent peak reverse voltage 600 V. |
| SMBJ160C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 178 V (min), 218 V (max). Test current 1.0 mA. Bidirectional. |
| P4KE220C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 220 V. Bidirectional. |
| P6KE20C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 20 V. Bidirectional. |
| 3EZ20D10 | JGD | 3 W, silicon zener diode. Nominal voltage 20 V, current 37 mA, +-10% tolerance. |
| 1N5528B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-5% tolerance. |
| 1N5930D | JGD | 1.5 W, silicon zener diode. Zener voltage 16V. Test current 23.4 mA. +-1% tolerance. |
| ZMM55-A5V1 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 4.8-5.4 V. Test current 5 mA. +-1% tolerance. |
| SMBJ5921B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 6.8 V. Test current 55.1 mA. +-5% tolerance. |
| SMAJ17A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 17 V. |
| KBPC606G | JGD | Single phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600V. |
| SMBJ48C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 53.3 V (min), 65.1 V (max). Test current 1.0 mA. Bidirectional. |
| 3EZ15D3 | JGD | 3 W, silicon zener diode. Nominal voltage 15 V, current 50 mA, +-3% tolerance. |
| P4KE82CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 82 V. Bidirectional. |
| SMBJ18A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 20.0 V (min), 22.1 V (max). Test current 1.0 mA. |
| RB151G | JGD | Miniature single phase 1.5 A. Glass passivated bridge rectifier. Max recurrent peak reverse voltage 50 V. |
| 1N5953D | JGD | 1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-1% tolerance. |
| 3EZ28D4 | JGD | 3 W, silicon zener diode. Nominal voltage 28 V, current 27 mA, +-4% tolerance. |
| 1W01 | JGD | Single phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100 V. |
| HER106L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V. |
| SMAJ8.0C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.0 V. Bidirectional. |
| SMAJ100C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 100 V. Bidirectional. |
| TMBD2835 | JGD | Surface mount switching diode. Max forward voltage 1.00V at 50mA. |
