1N5519B spec: "0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-5% tolerance."

1N5519B Samanlaisia

1N5518
- 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-20% tolerance.
1N5518A
- 0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance.
1N5518B
- 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance.
1N5518C
- 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-2% tolerance.
1N5518D
- 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-1% tolerance.
1N5519
- 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-20% tolerance.
1N5519A
- 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-10% tolerance.
1N5519B
- "0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-5% tolerance."

1N5519B Datasheet ja Spec

Valmistaja : JGD

Pakkauspäivämäärä : DO-35

Pins : 2

Lämpötila : Min -65 °C | Max 200 °C

Koko : 267 KB

Hakemus : "0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-5% tolerance."