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FSYC9160D spec: Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160D Samanlaisia
- FSYC055D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC055R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC160R
- Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
- FSYC163D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC163D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC163R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC260D
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSYC260R
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYC9160D Datasheet ja Spec
Valmistaja : Intersil
Pakkauspäivämäärä :
Pins : 0
Lämpötila : Min 0 °C | Max 0 °C
Koko : 67 KB
Hakemus : Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYC9160D PDF Lataa