Path:OKDatasheet > Semiconductor Datasheet > Infineon Datasheet > HYB5117400BJ-500
HYB5117400BJ-500 spec: 4M x 4bit DRAM
HYB5117400BJ-500 Samanlaisia
- HYB511000BJ-50
- 1M x 1bit DRAM
- HYB511000BJ-70
- 1M x 1bit DRAM
- HYB511000BJL-50
- 1M x 1bit DRAM
- HYB511000BJL-70
- 1M x 1bit DRAM
- HYB5116160BSJ-50
- 1M x 16-DRAM
- HYB5116160BSJ-60
- 1M x 16-DRAM
- HYB5116160BSJ-70
- 1M x 16-DRAM
- HYB5116165BJ-50
- 1M x 16bit EDO-DRAM
HYB5117400BJ-500 Datasheet ja Spec
Valmistaja : Infineon
Pakkauspäivämäärä : P-SOJ-26/24 300 mil
Pins : 26
Lämpötila : Min 0 °C | Max 70 °C
Koko : 357 KB
Hakemus : 4M x 4bit DRAM
HYB5117400BJ-500 PDF Lataa