Path:OKDatasheet > Semiconductor Datasheet > IXYS Datasheet > IXBT16N170
IXBT16N170 spec: 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBT16N170 Samanlaisia
- IXBT16N170
- 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
- IXBT40N140
- 1400V high voltage BIMOSFET
- IXBT40N160
- 1600V high voltage BIMOSFET
- IXBT40N160
- 1600V high voltage BIMOSFET
- IXBT40N160
- 1600V high voltage BIMOSFET monolithic bipolar MOS transistor
- IXBT42N170
- 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBT16N170 Datasheet ja Spec
Valmistaja : IXYS
Pakkauspäivämäärä : TO-268
Pins : 3
Lämpötila : Min -55 °C | Max 150 °C
Koko : 54 KB
Hakemus : 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBT16N170 PDF Lataa