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IRF9510 spec: HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -4.0A
IRF9510 Samanlaisia
- IRF9130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
- IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
- IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
- IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9510 Datasheet ja Spec
Valmistaja : IR
Pakkauspäivämäärä :
Pins : 3
Lämpötila : Min -55 °C | Max 175 °C
Koko : 188 KB
Hakemus : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -4.0A
IRF9510 PDF Lataa