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IRF5Y3315CM spec: HEXFET power MOSFET thru-hole. BVDSS = 150V, RDS(on) = 0.085 Ohm, ID = 18A
IRF5Y3315CM Samanlaisia
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5Y3315CM Datasheet ja Spec
Valmistaja : IR
Pakkauspäivämäärä : TO-257AA
Pins : 3
Lämpötila : Min -55 °C | Max 150 °C
Koko : 116 KB
Hakemus : HEXFET power MOSFET thru-hole. BVDSS = 150V, RDS(on) = 0.085 Ohm, ID = 18A
IRF5Y3315CM PDF Lataa