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IRF3315 spec: HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
IRF3315 Samanlaisia
- IRF3205
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF3205L
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF3205S
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF330
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
- IRF330
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
- IRF3315
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
- IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
- IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
IRF3315 Datasheet ja Spec
Valmistaja : IR
Pakkauspäivämäärä :
Pins : 3
Lämpötila : Min -55 °C | Max 175 °C
Koko : 136 KB
Hakemus : HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
IRF3315 PDF Lataa