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IRC530 Samanlaisia

  • IRC530
    • HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V.
  • IRC540
    • HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm

IRC530 Datasheet ja Spec

Valmistaja : IR 

Pakkauspäivämäärä : TO-220 

Pins : 5 

Lämpötila : Min -55 °C | Max 175 °C

Koko : 248 KB

Hakemus : HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. 

IRC530 PDF Lataa