IR Datalehti Catalog-68
| Osa Ei | Valmistaja | Hakemus |
|---|---|---|
| SD453N20S30MSC | IR | Fast recovery diode |
| SD150R16MBV | IR | Standard recovery diode |
| IRF9Z24L | IR | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A |
| IRGPH40M | IR | Insulated gate bipolar transistor |
| SD150N16MBV | IR | Standard recovery diode |
| 301U160 | IR | Standard recovery diode |
| IRFB9N65A | IR | HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 8.5A |
| ST303C04CHK2L | IR | Inverter grade thyristor |
| 45L5 | IR | Standard recovery diode |
| ST173S12MFK2 | IR | Inverter grade thyristor |
| SD233N45S50MSC | IR | Fast recovery diode |
| IRFPC50LC | IR | HEXFET power mosfet |
| ST333S04MFM0L | IR | Inverter grade thyristor |
| SD103R25S20MC | IR | Fast recovery diode |
| 307UR160P4 | IR | Standard recovery diode |
| IRGPC40UD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
| ST1200C16K0L | IR | Phase control thyristor |
| SD200R24PBC | IR | Standard recovery diode |
| CPV362MF | IR | IGBT SIP module |
| ST333C04LHK1L | IR | Inverter grade thyristor |
| IRF5305S | IR | Power MOSFET, 55V, 31A |
| 303URA120P4 | IR | Standard recovery diode |
| ST2600C20R1 | IR | Phase control thyristor |
| IRG4BC20MD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A |
| SD703C12S20L | IR | Fast recovery diode |
| ST230S12P2V | IR | Phase control thyristor |
| SD103N10S10MC | IR | Fast recovery diode |
| 180RKI80S90 | IR | Phase control thyristor |
| ST1900C52R1 | IR | Phase control thyristor |
| ST380C04C2 | IR | Phase control thyristor |