| Osa Ei | Valmistaja | Hakemus |
|---|
| SD203N12S10MSC | IR | Fast recovery diode |
| ST180S08P2 | IR | Phase control thyristor |
| ST1230C08K2L | IR | Phase control thyristor |
| ST330S12M3L | IR | Phase control thyristor |
| ST330C04L2 | IR | Phase control thyristor |
| 130HF120PBV | IR | Standard recovery diode |
| IRFP360 | IR | HEXFET power MOSFET. VDSS = 400 V, RDS(on) = 0.20 Ohm, ID = 23 A |
| ST230C16C1L | IR | Phase control thyristor |
| SD600N25PTC | IR | Standard recovery diode |
| IRFP354 | IR | HEXFET power MOSFET. VDSS = 450 V, RDS(on) = 0.35 Ohm, ID = 14 A |
| 300HFR40PB | IR | Standard recovery diode |
| IRG4BC10SD-S | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A |
| ST330C16C1L | IR | Phase control thyristor |
| IRG4BC15MD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.88V @ VGE = 15V, IC = 8.5A |
| ST3230C12R3L | IR | Phase control thyristor |
| ST230S12P1V | IR | Phase control thyristor |
| SD233R36S50MTC | IR | Fast recovery diode |
| IRFBC40AS | IR | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A |
| ST300C12C2L | IR | Phase control thyristor |
| SD103N08S20MBC | IR | Fast recovery diode |
| ST303S04MFN0L | IR | Inverter grade thyristor |
| SD500N30MTC | IR | Standard recovery diode |
| SD103R16S10MSV | IR | Fast recovery diode |
| ST173C12CHK1 | IR | Inverter grade thyristor |
| ST330C12C1 | IR | Phase control thyristor |
| SD253R04S20MBV | IR | Fast recovery diode |
| SD600R25MTC | IR | Standard recovery diode |
| ST3230C16R0L | IR | Phase control thyristor |
| SD233N36S50MTC | IR | Fast recovery diode |
| SD200N08MSC | IR | Standard recovery diode |
