Path:OKDatasheet > Semiconductor Datasheet > GSI Datasheet > GS832018T-200I
GS832018T-200I spec: 200MHz 7.5ns 1M x 36 36Mb synchronous burst SRAM
GS832018T-200I Samanlaisia
- GS832218B-250
- 250MHz 6ns 2M x 18 36Mb DCD pipelined/flow through SRAM
- GS832418B-133I
- 133MHz 11ns 2M x 18 36Mb S/DCD sync burst SRAM
- GS8324Z18B-166I
- 166MHz 8.5ns 2M x 18 36Mb sync NBT SRAM
- GS8324Z18C-166I
- 166MHz 7ns 2M x 18 36Mb sync NBT SRAM
- GS832418B-166
- 166MHz 8.5ns 2M x 18 36Mb S/DCD sync burst SRAM
- GS8324Z18B-166
- 166MHz 8.5ns 2M x 18 36Mb sync NBT SRAM
- GS8322Z18B-166I
- 166MHz 8.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
- GS8322Z18B-200
- 200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
GS832018T-200I Datasheet ja Spec
Valmistaja : GSI
Pakkauspäivämäärä : TQFP
Pins : 100
Lämpötila : Min -40 °C | Max 85 °C
Koko : 880 KB
Hakemus : 200MHz 7.5ns 1M x 36 36Mb synchronous burst SRAM
GS832018T-200I PDF Lataa