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ECF10N25 Samanlaisia

  • ECF10N25
    • N-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range.
  • ECF10P25
    • P-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range.

ECF10N25 Datasheet ja Spec

Valmistaja : EXICON 

Pakkauspäivämäärä : TO3 

Pins : 3 

Lämpötila : Min -55 °C | Max 150 °C

Koko : 70 KB

Hakemus : N-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range. 

ECF10N25 PDF Lataa