W4TXE0X-0D00 Samanlaisia

  • W4TXE0X-0D00
    • Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TXE0X-0D00 Datasheet ja Spec

Valmistaja : Cree 

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Hakemus : Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

W4TXE0X-0D00 PDF Lataa