Path:OKDatasheet > Semiconductor Datasheet > Cree Datasheet > W4TXE0X-0D00
W4TXE0X-0D00 spec: Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Valmistaja : Cree
Pakkauspäivämäärä :
Pins : 0
Lämpötila : Min 0 °C | Max 0 °C
Koko : 306 KB
Hakemus : Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition