Path:OKDatasheet > Semiconductor Datasheet > Ceramate Datasheet > 54S416T-6
54S416T-6 spec: High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
54S416T-6 Samanlaisia
- 54S416T-5
- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
- 54S416T-6
- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
- 54S416T-7
- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
54S416T-6 Datasheet ja Spec
Valmistaja : Ceramate
Pakkauspäivämäärä : TSOP
Pins : 54
Lämpötila : Min 0 °C | Max 70 °C
Koko : 1126 KB
Hakemus : High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
54S416T-6 PDF Lataa