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2N5551 spec: Amplifier transistor. Collector-emitter voltage Vceo = 160V. Collector-base voltage Vcbo = 180V. Collector dissipation Pc(max) = 625mW.
2N5551 Samanlaisia
- 2N5550
- Amplifier transistor. Collector-emitter voltage Vceo = 140V. Collector-base voltage Vcbo = 160V. Collector dissipation Pc(max) = 625mW.
- 2N5551
- Amplifier transistor. Collector-emitter voltage Vceo = 160V. Collector-base voltage Vcbo = 180V. Collector dissipation Pc(max) = 625mW.
2N5551 Datasheet ja Spec
Valmistaja : Usha
Pakkauspäivämäärä :
Pins : 3
Lämpötila : Min 0 °C | Max 150 °C
Koko : 82 KB
Hakemus : Amplifier transistor. Collector-emitter voltage Vceo = 160V. Collector-base voltage Vcbo = 180V. Collector dissipation Pc(max) = 625mW.
2N5551 PDF Lataa