STH6NA80FI Samanlaisia

STH60N10
- Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
STH60N10FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6NA80FI
- N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS

STH6NA80FI Datasheet ja Spec

Pakkauspäivämäärä :

Pins : 0

Lämpötila : Min 0 °C | Max 0 °C

Koko : 151 KB

Hakemus : N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS