F2012 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 Samanlaisia

F2012
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2013
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 Datasheet ja Spec

Valmistaja : Polyfet RF

Pakkauspäivämäärä :

Pins : 2

Lämpötila : Min -65 °C | Max 150 °C

Koko : 40 KB

Hakemus : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor