Path:OKDatasheet > Semiconductor Datasheet > Philips Datasheet > PHB8ND50E
PHB8ND50E spec: 500 V, power MOS transistor FREDFET, avalanche energy rated
PHB8ND50E Samanlaisia
- PHB80N06LT
- TrenchMOS transistor. Logic level FET.
- PHB80N06LT
- TrenchMOS transistor Logic level FET
- PHB80N06T
- TrenchMOS transistor Standard level FET
- PHB83N03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB87N03LT
- 25 V, N-channel trenchMOS transistor logic level FET
- PHB87N03LT
- TrenchMOS transistor. Logic level FET.
- PHB87N03LT
- N-channel TrenchMOS(TM) transistor Logic level FET
- PHB87N03T
- 30 V, TrenchMOS transistor standard level FET
PHB8ND50E Datasheet ja Spec
Valmistaja : Philips
Pakkauspäivämäärä : SOT
Pins : 3
Lämpötila : Min -55 °C | Max 150 °C
Koko : 80 KB
Hakemus : 500 V, power MOS transistor FREDFET, avalanche energy rated
PHB8ND50E PDF Lataa