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CA 1N5384B SK510 SA15A 2EZ17 ER804F 3.0SMCJ190 CM15010 P4KE24A SS13 PS206R 1.5SMCJ190C 3.0SMCJ58CA P4KE33 P6KE6.8CA SA40 SB1080FCT 1.5SMCJ43 P6KE22A 1SMB3EZ51 1SMB2EZ20 CP608 3EZ28 1.5SMCJ180 1SMB3EZ170 MMSZ5227B BZX84C10W BZT52-C5V6

PanJit Datalehti Catalog-70

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SA45 PanJitGlass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 45.00V, Vbr(min/max) = 50.00/63.30V, It = 1 mA.
SD350S PanJitSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current at Tc = 75degC 3 A.
P6SMBJ60CA PanJitSurfase mount transient voltage suppressor. 600W. Vrwm = 60 V. Vbr(min/max) = 66.7/76.7 V. It = 1.0 mA. Ir = 5 uA. Vc = 96.8 V. Ipp = 6.2 A.
1N5384B PanJitGlass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 160V, Izt = 8.0mA
SK510 PanJitSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 5.0 A.
SA15A PanJitGlass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 15.00V, Vbr(min/max) = 16.70/19.20V, It = 1 mA.
2EZ17 PanJitGlass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 17.0 V. Test current Izt = 29.4 mA.
ER804F PanJitIsolation superfast recovery rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current 8.0 A.
3.0SMCJ190 PanJitSurface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 190 V. Vbr(min/max) = 209/267.9.0V @ It. Ir = 5 uA @ Vrwm. Vc = 340 V @ Ipp = 8.8 A.
CM15010 PanJitHigh current silicon bridge rectifier. Max recurrent peak reverse voltage 1000V. Max average forward current 15.0A
P4KE24A PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 20.50V, Vbr(min/max) = 22.80/25.20V, It = 1mA.
SS13 PanJitSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward current 1.0 A.
PS206R PanJitFast switching plastic rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 9.5mm lead length at Ta = 55degC 2.0 A.
1.5SMCJ190C PanJitSurface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 190V; Vbr(min/max) = 209/267.9V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 340V, @ Ipp = 4.4A
3.0SMCJ58CA PanJitSurface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 58 V. Vbr(min/max) = 64.4/74.1 V @ It. Ir = 5 uA @ Vrwm. Vc = 93.6 V @ Ipp = 32.0 A.
P4KE33 PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 26.80V, Vbr(min/max) = 29.70/36.30V, It = 1mA.
P6KE6.8CA PanJitGlass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 5.80V, Vbr(min/max) = 6.45/7.14V, It = 10 mA.
SA40 PanJitGlass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 40.00V, Vbr(min/max) = 44.40/56.30V, It = 1 mA.
SB1080FCT PanJitIsolation schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 90degC 10 A.
1.5SMCJ43 PanJitSurface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 43V; Vbr(min/max) = 47.8/60.5V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 76.7V, @ Ipp = 19.6A
P6KE22A PanJitGlass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 18.80V, Vbr(min/max) = 20.90/23.10V, It = 1 mA.
1SMB3EZ51 PanJitSurface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 51 V. Test current Izt = 15 mA
1SMB2EZ20 PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 20.0 V. Test current Izt = 25.0 mA
CP608 PanJitSingle-phase silicon bridge - P.C. MTG 3A, heat-sink MTG 6A . Max recurrent peak reverse voltage 800V. Max average rectified output 6.0A(at Tc=50degC), 3.0(at Ta=25degC).
3EZ28 PanJitGlass passivated junction silicon zener. Power 3.0 Watts. Vz = 28 V. Izt = 27 mA.
1.5SMCJ180 PanJitSurface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 180V; Vbr(min/max) = 198/253.8V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 322V, @ Ipp = 4.7A
1SMB3EZ170 PanJitSurface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 170 V. Test current Izt = 4.4 mA
MMSZ5227B PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 3.6 V @ Izt. 500 mWatts zener diode.
BZX84C10W PanJitSurface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 10 V
BZT52-C5V6 PanJitSurface mount silicon zener diode. Power 410 mWatts. Nominal zener voltage 5.6 V @ Iz = 5 mA.

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