Path:okDatasheet > Semiconductor Datasheet > PanJit Datasheet > PanJit-40
0A 1SMB3EZ30 PG154R 3.0SMCJ26C 15KP43CA SD880S P6SMBJ170 MMBZ5245BW P4KE91A MMSZ5240B P4KE27CA GS1G GBL408 15KP18A CM1501 MMBZ5257B UF1603FCT P4SMAJ12C 15KP30CA SA85A SA64CA P6SMBJ43 1N5928B ER1001FCT P4KE18CA 1.5SMCJ7.5 SB10100DC 15KP100C
Osa Ei | Valmistaja | Hakemus |
---|---|---|
P6SMBJ43A | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 43 V. Vbr(min/max) = 47.8/54.9 V. It = 1.0 mA. Ir = 5 uA. Vc = 69.4 V. Ipp = 8.6 A. |
UF102 | PanJit | Ultrafast switching rectifier. Peak reverse voltage 200 V. Average forward current 1.0 A. |
SA100A | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 100.00V, Vbr(min/max) = 111.00/128.00V, It = 1 mA. |
1SMB3EZ30 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 30 V. Test current Izt = 25 mA |
PG154R | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 400 A. Average forward current. IO at 55degC, 3.8inches lead length 60 Hz, resistive or inductive load 1.5 A. |
3.0SMCJ26C | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 26 V. Vbr(max/min) = 28.9/36.6 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 46.6 V @ Ipp = 64.4 A. |
15KP43CA | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 43 V. Vbr(min/max) = 47.8/54.9 V @ It = 5.0 mA. Ir = 10 uA. Vc = 69.4 V @ Ipp = 215 A. |
SD880S | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 85degC 8.0 A. |
P6SMBJ170 | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V. It = 1.0 mA. Ir = 5 uA. Vc = 304 V. Ipp = 2.0 A. |
MMBZ5245BW | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 15 V @ Izt. 200 mWatts zener diode. |
P4KE91A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 77.80V, Vbr(min/max) = 86.50/95.50V, It = 1mA. |
MMSZ5240B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 10 V @ Izt. 500 mWatts zener diode. |
P4KE27CA | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 23.10V, Vbr(min/max) = 25.70/28.40V, It = 1 mA. |
GS1G | PanJit | Surface mount rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current at Tl=75degC 1.0 A. |
GBL408 | PanJit | Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). |
15KP18A | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 18 V. Vbr(min/max) = 20.0/23.3 V @ It = 50 mA. Ir = 5000 uA. Vc = 29.2 V @ Ipp = 485 A. |
CM1501 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load 15A. Non-repetive peak forward surge current at rated load 300A. |
MMBZ5257B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 33 V @ Izt. 500 mWatts zener diode. |
UF1603FCT | PanJit | Isolation ultrafast switching rectifier. Max recurrent peak reverse voltage 300 V. Max average forward rectified current at Tc = 100degC 16.0 A. |
P4SMAJ12C | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 12 V. Breakdown voltage(min/max) 13.3/16.9 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 22.0 V. Peak pulse current 18.1 A. |
15KP30CA | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 30 V. Vbr(min/max) = 33.3/38.5 V @ It = 5.0 mA. Ir = 28 uA. Vc = 48.4 V @ Ipp = 296 A. |
SA85A | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 85.00V, Vbr(min/max) = 94.40/108.20V, It = 1 mA. |
SA64CA | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 64.00V, Vbr(min/max) = 71.10/81.80V, It = 1 mA. |
P6SMBJ43 | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 43 V. Vbr(min/max) = 47.8/60.5 V. It = 1.0 mA. Ir = 5 uA. Vc = 76.7 V. Ipp = 7.8 A. |
1N5928B | PanJit | Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 13V. Test current Izt = 28.8 mA. |
ER1001FCT | PanJit | Isolation superfast recovery rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified current (Tc=100degC) 10.0A. |
P4KE18CA | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 15.30V, Vbr(min/max) = 17.10/18.90V, It = 1 mA. |
1.5SMCJ7.5 | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 7.5V; Vbr(min/max) = 8.33/10.67V @ It = 1.0mA; Ir(@ Vrwm) = 100uA; Vc = 14.3V @ Ipp = 104.9A |
SB10100DC | PanJit | DDPak surfase schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 100degC 10 A. |
15KP100C | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 179 V @ Ipp = 84 A. |