Path:okDatasheet > Semiconductor Datasheet > PanJit Datasheet > PanJit-100

W MMBZ5242BW 15KP210 P4KE7.5C P6KE9.1A 3.0SMCJ120CA 3KP28 SA20 1SMB2EZ12 GBPC1502W 1.5SMCJ40C MMSZ5257BS SD860S 3.0SMCJ54C 3.0SMCJ43 1A2G SR26 1S10 MMBZ5228B ER1B PS158 TSP075A P6SMBJ70C BZT52-C33S SB3050CT GBU6A 1N5366B 15KP58C SB340

PanJit Datalehti Catalog-100

Osa EiValmistajaHakemus
P6SMBJ110A PanJitSurfase mount transient voltage suppressor. 600W. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V. It = 1.0 mA. Ir = 5 uA. Vc = 177 V. Ipp = 3.4 A.
MMBZ5221BW PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 2.4 V @ Izt. 200 mWatts zener diode.
MMBZ5242BW PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 12 V @ Izt. 200 mWatts zener diode.
15KP210 PanJitGlass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
P4KE7.5C PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 6.05V, Vbr(min/max) = 6.75/8.25V, It = 10 mA.
P6KE9.1A PanJitGlass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 7.78V, Vbr(min/max) = 8.65/9.50V, It = 1 mA.
3.0SMCJ120CA PanJitSurface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 120 V. Vbr(min/max) = 133/153.0.0V @ It. Ir = 5 uA @ Vrwm. Vc = 193 V @ Ipp = 15.6 A.
3KP28 PanJitGlass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 28.00 V. Vbr = 31.10 V (min), 39.40 V (max). It = 1 mA.
SA20 PanJitGlass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 20.00V, Vbr(min/max) = 22.20/28.10V, It = 1 mA.
1SMB2EZ12 PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 12.0 V. Test current Izt = 41.5 mA
GBPC1502W PanJitHigh current silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current for resistive load at Tc=55degC 15 A.
1.5SMCJ40C PanJitSurface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 40V; Vbr(min/max) = 44.4/56.3V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 71.4V, @ Ipp = 21.0A
MMSZ5257BS PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 33 V @ Izt. 200 mWatts zener diode.
SD860S PanJitSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 85degC 8.0 A.
3.0SMCJ54C PanJitSurface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 54 V. Vbr(min/max) = 60.0/76.0 V @ It. Ir = 5 uA @ Vrwm. Vc = 96.3 V @ Ipp = 31.2 A.
3.0SMCJ43 PanJitSurface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 43 V. Vbr(max/min) = 47.8/60.5 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 76.7 V @ Ipp = 39.2 A.
1A2G PanJitMiniature glass passivated junction plastic rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.0 A.
SR26 PanJitMini surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current 2.0 A.
1S10 PanJit1 Ampere schottky barrier rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 1.0 A.
MMBZ5228B PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 3.9 V @ Izt. 500 mWatts zener diode.
ER1B PanJitSurface mount superfast rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified current 1.0A.
PS158 PanJitPlastic silicon rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 9.5mm lead length at Ta = 60degC 1.5 A.
TSP075A PanJitAxial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 75V. Breakover voltage 98V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA.
P6SMBJ70C PanJitSurfase mount transient voltage suppressor. 600W. Vrwm = 70 V. Vbr(min/max) = 77.8/98.6 V. It = 1.0 mA. Ir = 5 uA. Vc = 125 V. Ipp = 4.8 A.
BZT52-C33S PanJitSurface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 33 V
SB3050CT PanJitSchottky barrier rectifier. Max recurrent peak reverse voltage 50.0 V. Max average forward rectified current at Tc = 90degC 30 A.
GBU6A PanJitGlass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified output current at Tc=100degC 6.0 A.
1N5366B PanJitGlass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 39V, Izt = 30mA
15KP58C PanJitGlass passivated junction transient voltage suppressor. Vrwm = 58 V. Vbr(min/max) = 64.4/81.6 V @ It = 5.0 mA. Ir = 10 uA. Vc = 103 V @ Ipp = 144 A.
SB340 PanJitSchottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at 75degC 3.0 A.

<< 101 102 103 104 105 106 107 108 109 110 111 112 113 114