| Osa Ei | Valmistaja | Hakemus |
|---|
| BZX84C5V1W | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 5.1 V |
| SB830FCT | PanJit | Isolation schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 100degC 8 A. |
| 1SMB5936 | PanJit | Surface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 30 V. Test current Izt = 12.5 mA |
| 1N5399 | PanJit | Plastic silicon rectifier. Max reccurent peak reverse voltage 1000V. Max average forward rectified current 1.5A. |
| ER3G | PanJit | Surface mount rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current 3.0 A. |
| P6KE75C | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 60.70V, Vbr(min/max) = 67.50/82.50V, It = 1 mA. |
| CP3010 | PanJit | Single-phase silicon bridge-P.C. MTG 2A, heat-sink MTG 3A . Max recurrent peak reverse voltage 1000V. Max average rectified output 3.0A(at Tc=50), 2.0(at Ta=25). |
| P4KE15CA | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 12.80V, Vbr(min/max) = 14.30/15.80V, It = 1 mA. |
| GBPC1506 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 600 V. Max average forward current for resistive load at Tc=55degC 15 A. |
| UF100 | PanJit | Ultrafast switching rectifier. Peak reverse voltage 50 V. Average forward current 1.0 A. |
| MMBZ5251B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 22 V @ Izt. 500 mWatts zener diode. |
| MMBZ5231BW | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 5.1 V @ Izt. 200 mWatts zener diode. |
| 3.0SMCJ45C | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 45 V. Vbr(max/min) = 50.0/63.3 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 80.3 V @ Ipp = 37.4 A. |
| 3EZ19 | PanJit | Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 19 V. Izt = 40 mA. |
| MMSZ5259B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 39 V @ Izt. 500 mWatts zener diode. |
| SA170 | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 170.00V, Vbr(min/max) = 189.00/239.50V, It = 1 mA. |
| UF3D | PanJit | Surface mount ultrafast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 3.0 A. |
| 3.0SMCJ33C | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 33 V. Vbr(max/min) = 36.7/46.5 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 59.0 V @ Ipp = 50.4 A. |
| 3KP20 | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 20.00 V. Vbr = 22.20 V (min), 28.10 V (max). It = 1 mA. |
| 1N4933 | PanJit | Fast switching plastic rectifier. Maximum recurrent peak reverse voltage 50V. Maximum average forward rectified gurrent 1A |
| SD830YT | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 85degC 8.0 A. |
| 15KP45CA | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 45 V. Vbr(min/max) = 50.0/57.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 72.7 V @ Ipp = 205 A. |
| PG101R | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 100 A. Max average forward rectified current 9.5mm lead length at Ta = 55degC 1.0 A. |
| P6SMBJ16C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 16 V. Vbr(min/max) = 17.8/22.6 V. It = 1.0 mA. Ir = 5 uA. Vc = 28.8 V. Ipp = 20.8 A. |
| MMSZ5258B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 36 V @ Izt. 500 mWatts zener diode. |
| SB180 | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current 0.375inches lead length at Ta = 75degC 1.0 A. |
| SS12 | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward current 1.0 A. |
| BZT52-C4V7S | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 4.7 V |
| 3.0SMCJ8.0CA | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 8.0 V. Vbr(max/min) = 8.89/10.23 V @ It = 1.0 mA. Ir = 100 uA @ Vrwm. Vc = 13.6 V @ Ipp = 220.6 A. |
| GBJ8K | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified output current 8.0A(Tc=100degC), 6.0A(Ta=45degC). |
