1N5366B spec: Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 39V, Izt = 30mA

1N5366B Samanlaisia

1N5348B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 11V, Izt = 125mA
1N5349B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 12V, Izt = 100mA
1N5350B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 13V, Izt = 100mA
1N5351B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
1N5351B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
1N5352B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 15V, Izt = 75mA
1N5354B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 17V, Izt = 70mA
1N5355B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA

1N5366B Datasheet ja Spec

Valmistaja : PanJit

Pakkauspäivämäärä : DO-201AE

Pins : 2

Lämpötila : Min -55 °C | Max 150 °C

Koko : 336 KB

Hakemus : Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 39V, Izt = 30mA