Path:okDatasheet > Semiconductor Datasheet > MDE Semiconductor Datasheet > MDE Semiconductor-15
8 SA28 MDE-7D151M MAX20-150.0CA MDE-14D751K SMBJ30A 20KW112A 15KP17 MDE-10D301K 3KP17A 3KP7.0 P4KE22 15KP36A MAX40-12.0CA MDE-25S112K P6KE170 SMBJ13 MDE-53D331K MDE-5D471K 1.5KE33A 15KW150 SMCJ58 30KW45A P4KE75A MDE-10D391K MAX40-140.0CA 3KP10A SMDJ17A
Osa Ei | Valmistaja | Hakemus |
---|---|---|
1.5KE68 | MDE Semiconductor | 55.10V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
SMBJ16 | MDE Semiconductor | 16.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SMBJ28 | MDE Semiconductor | 28.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SA28 | MDE Semiconductor | 28.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE-7D151M | MDE Semiconductor | 150V; max peak current1750A; metal oxide varistor. Standard D series 7mm disc |
MAX20-150.0CA | MDE Semiconductor | 150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE-14D751K | MDE Semiconductor | 750V; max peak current5000A; metal oxide varistor. Standard D series 14mm disc |
SMBJ30A | MDE Semiconductor | 30.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
20KW112A | MDE Semiconductor | 112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
15KP17 | MDE Semiconductor | 17.0V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE-10D301K | MDE Semiconductor | 300V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
3KP17A | MDE Semiconductor | 17.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
3KP7.0 | MDE Semiconductor | 7.00V; 50mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
P4KE22 | MDE Semiconductor | 17.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
15KP36A | MDE Semiconductor | 36.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MAX40-12.0CA | MDE Semiconductor | 12.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE-25S112K | MDE Semiconductor | 1100V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
P6KE170 | MDE Semiconductor | 138.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
SMBJ13 | MDE Semiconductor | 13.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE-53D331K | MDE Semiconductor | 330V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
MDE-5D471K | MDE Semiconductor | 470V; max peak current800A; metal oxide varistor. Standard D series 5mm disc |
1.5KE33A | MDE Semiconductor | 28.20V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
15KW150 | MDE Semiconductor | 150.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
SMCJ58 | MDE Semiconductor | 58.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
30KW45A | MDE Semiconductor | 45.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
P4KE75A | MDE Semiconductor | 64.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE-10D391K | MDE Semiconductor | 390V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
MAX40-140.0CA | MDE Semiconductor | 140.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
3KP10A | MDE Semiconductor | 10.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SMDJ17A | MDE Semiconductor | 17.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |