| Osa Ei | Valmistaja | Hakemus |
|---|
| 1N4126 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 51V. |
| P4KE16 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V. |
| 3EZ140D3 | JGD | 3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-3% tolerance. |
| 1N5545A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. +-10% tolerance. |
| 1N5520B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-5% tolerance. |
| 1N990A | JGD | 0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-10% tolerance. |
| 1N4728A | JGD | 1W zener diode. Zener voltage 3.3V. |
| KBPC604G | JGD | Single phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V. |
| W06M | JGD | Single phase silicon bridge rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 1.5 A. |
| 1N4762D | JGD | 1W zener diode. Nominal zener voltage 82V. 1% tolerance. |
| 1N747A | JGD | 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-5% tolerance. |
| FS1M | JGD | 1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 1000V. |
| 1N967 | JGD | 0.5W, silicon zener diode. Zener voltage 18V. Test current 7.0mA. +-20% tolerance. |
| 1A5 | JGD | 1.0 A silicon rectifier. Max recurrent peak reverse voltage 600 V. |
| 1N976B | JGD | 0.5W, silicon zener diode. Zener voltage 43V. Test current 3.0mA. +-5% tolerance. |
| 1N984A | JGD | 0.5W, silicon zener diode. Zener voltage 91V. Test current 1.4mA. +-10% tolerance. |
| 1N4743C | JGD | 1W zener diode. Nominal zener voltage 13V. 2% tolerance. |
| 3EZ4.7D | JGD | 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-20% tolerance. |
| 1N4370A | JGD | 500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-5% tolerance. |
| KBPC310 | JGD | Single phase 3.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V. |
| 3EZ150D4 | JGD | 3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-4% tolerance. |
| 1N4135C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 100V. 2% tolerance. |
| 3EZ91D3 | JGD | 3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-3% tolerance. |
| HER156G | JGD | 1.5 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V. |
| SMAJ70 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 70 V. |
| 3EZ9.1D1 | JGD | 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-1% tolerance. |
| SMBJ17CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 18.9 V (min), 20.9 V (max). Test current 1.0 mA. Bidirectional. |
| HER107G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 800V. |
| 1N986A | JGD | 0.5W, silicon zener diode. Zener voltage 110V. Test current 1.1mA. +-10% tolerance. |
| SR760 | JGD | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 60 V. Max average forward current 7.5 A. |
