| Osa Ei | Valmistaja | Hakemus |
|---|
| P4KE100A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V. |
| UF5402G | JGD | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 3.0 A. |
| 1N5520C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-2% tolerance. |
| 1N5404G | JGD | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. |
| SMAJ36CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 36 V. Bidirectional. |
| GS1D | JGD | 1.0A, surface mount rectifier. Max recurrent peak reverse voltage 200V. |
| SMAJ12C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 12 V. Bidirectional. |
| SMBJ5924A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 9.1 V. Test current 41.2 mA. +-10% tolerance. |
| LS4148 | JGD | Surface mount switching diode. Peak reverse voltage 100V. Rectified current 150mA. |
| 1N4758A | JGD | 1W zener diode. Zener voltage 56V. |
| BY550-1000 | JGD | 5.0 A silicon rectifier. Max recurrent peak reverse voltage 1000 V. |
| 1N990 | JGD | 0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-20% tolerance. |
| SMAJ60 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 60 V. |
| P4KE9.1 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 9.1 V. |
| KBU610G | JGD | Single phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V. |
| EM516 | JGD | 0.5 A silicon rectifier. Max recurrent peak reverse voltage 1800 V. |
| P6KE56A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 56 V. |
| 1N961D | JGD | 0.5W, silicon zener diode. Zener voltage 10V. Test current 12.5mA. +-1% tolerance. |
| 3EZ27D | JGD | 3 W, silicon zener diode. Nominal voltage 27 V, current 28 mA, +-20% tolerance. |
| 1N5927D | JGD | 1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-1% tolerance. |
| SMAJ48C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 48 V. Bidirectional. |
| RC208 | JGD | Single phase 2 A. Single bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 2 A. |
| HER605G | JGD | 6.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 400V. |
| SMAJ160CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V. Bidirectional. |
| SFR202 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 2.0 A. |
| FS1J | JGD | 1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 600V. |
| SF63 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 150 V. Max average forward current 6.0 A. |
| 1N4124 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 43V. |
| 1N5534D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 14.0 V. Test current 1.0 mAdc. +-1% tolerance. |
| SMBJ5945D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 68 V. Test current 5.5 mA. +-1% tolerance. |
