Path:OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRG4BC30K
IRG4BC30K spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
Path:OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRG4BC30K
IRG4BC30K spec: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
Valmistaja : IR
Pakkauspäivämäärä :
Pins : 3
Lämpötila : Min -55 °C | Max 150 °C
Koko : 150 KB
Hakemus : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A