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IRF9Z14 spec: HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -6.7A
IRF9Z14 Samanlaisia
- IRF9130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
- IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
- IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
- IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9Z14 Datasheet ja Spec
Valmistaja : IR
Pakkauspäivämäärä :
Pins : 3
Lämpötila : Min -55 °C | Max 175 °C
Koko : 190 KB
Hakemus : HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -6.7A
IRF9Z14 PDF Lataa