IRF7526D1 spec: FETKY MOSFET and schottky diode. VDSS = -30V, RDS(on) = 0.20 Ohm, schottky Vf = 039V.

IRF7526D1 Samanlaisia

IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF720
- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
- N-channel HEXFET, 350V, 3.3A
IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7526D1 Datasheet ja Spec

Valmistaja : IR

Pakkauspäivämäärä : Micro8

Pins : 8

Lämpötila : Min -55 °C | Max 150 °C

Koko : 131 KB

Hakemus : FETKY MOSFET and schottky diode. VDSS = -30V, RDS(on) = 0.20 Ohm, schottky Vf = 039V.