| Osa Ei | Valmistaja | Hakemus |
|---|
| IRFR9214 | IR | HEXFET power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ohm, ID = -2.7A |
| IRFU9210 | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -1.9A |
| IRF430 | IR | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A |
| SD233N45S50PSC | IR | Fast recovery diode |
| 70UFR120APD | IR | Standard recovery diode |
| IRFI540N | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.052 Ohm, ID = 20 A |
| ST333S08MFM0 | IR | Inverter grade thyristor |
| SD203N12S10PC | IR | Fast recovery diode |
| SD500R45MC | IR | Standard recovery diode |
| ST2100C38R3L | IR | Phase control thyristor |
| SD300R04PBC | IR | Standard recovery diode |
| ST110S14P0 | IR | Phase control thyristor |
| ST330S16P3L | IR | Phase control thyristor |
| 301URA120P5 | IR | Standard recovery diode |
| SD453N20S20MC | IR | Fast recovery diode |
| SD103N20S10MSC | IR | Fast recovery diode |
| 70UR80 | IR | Standard recovery diode |
| 309UA200P4 | IR | Standard recovery diode |
| ST280C04C3 | IR | Phase control thyristor |
| ST223S08PFN2L | IR | Inverter grade thyristor |
| SD600N32MTC | IR | Standard recovery diode |
| IRF6602 | IR | Power MOSFET for Ideal for CPU core DC-DC converters, 20V, 11A |
| 70U10 | IR | Standard recovery diode |
| IRF7523D1 | IR | FETKY MOSFET and schottky diode. VDSS = 30V, RDS(on) = 0.11 Ohm, schottky Vf = 039V. |
| IRG4RC10UD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. |
| IRF7606 | IR | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.09 Ohm. |
| ST330C08L2 | IR | Phase control thyristor |
| SD153R10S15MSV | IR | Fast recovery diode |
| SD303C08S20C | IR | Fast recovery diode |
| 301URA200P5 | IR | Standard recovery diode |
