| Osa Ei | Valmistaja | Hakemus |
|---|
| SD253N08S20MSV | IR | Fast recovery diode |
| 111RKI120 | IR | Phase control thyristor |
| IRF7807D1 | IR | FETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =25mOhm |
| ST1900C50R2 | IR | Phase control thyristor |
| ST230S08P2L | IR | Phase control thyristor |
| 301URA80 | IR | Standard recovery diode |
| IRF7604 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.09 Ohm. |
| IRFRC20 | IR | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.0A |
| ST180S12P0VL | IR | Phase control thyristor |
| ST3230C10R1 | IR | Phase control thyristor |
| SD300N32MC | IR | Standard recovery diode |
| SD300R12MBC | IR | Standard recovery diode |
| IR2110L6 | IR | High and low side driver |
| SD203R20S10PSC | IR | Fast recovery diode |
| SD1053C18S20L | IR | Fast recovery diode |
| 309UA160P3 | IR | Standard recovery diode |
| IRFP27N60K | IR | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 180 mOhm, ID = 27 A |
| ST203S10MFJ0L | IR | Inverter grade thyristor |
| SD103R25S10MC | IR | Fast recovery diode |
| IRFB13N50A | IR | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A |
| SD103R20S10MBC | IR | Fast recovery diode |
| SD153R08S15MV | IR | Fast recovery diode |
| IRFR4105TRL | IR | N-channel power MOSFET for fast switching applications, 55V, 27A |
| IRF140 | IR | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. |
| IRG4RC20F | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A |
| SD103N25S15PBC | IR | Fast recovery diode |
| IRFD120 | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.27 Ohm, ID = 1.3 A |
| SD203N25S20MBC | IR | Fast recovery diode |
| 47LFR60 | IR | Standard recovery diode |
| 309UA80P4 | IR | Standard recovery diode |
