| Osa Ei | Valmistaja | Hakemus |
|---|
| IRFS23N20D | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A |
| IRFR9014 | IR | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -5.1A |
| 307URA250P4 | IR | Standard recovery diode |
| ST303S08MFN1L | IR | Inverter grade thyristor |
| SD153N12S15MBV | IR | Fast recovery diode |
| IRF1302L | IR | Power MOSFET, 20V, 174A |
| SD203N10S10PC | IR | Fast recovery diode |
| IRGPF40F | IR | Insulated gate bipolar transistor |
| IRFU3910 | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.115 Ohm, ID = 16A |
| ST330S08P3 | IR | Phase control thyristor |
| 180RKI40 | IR | Phase control thyristor |
| IRFPF50 | IR | HEXFET power MOSFET. VDSS = 900 V, RDS(on) = 1.6 Ohm, ID = 6.7 A |
| SD150N14PC | IR | Standard recovery diode |
| 303UR200P3 | IR | Standard recovery diode |
| ST230S14P2L | IR | Phase control thyristor |
| ST173S12PFK0 | IR | Inverter grade thyristor |
| 305UR160P4 | IR | Standard recovery diode |
| ST300C18C1 | IR | Phase control thyristor |
| ST280S04M0V | IR | Phase control thyristor |
| SD453R12S30MTC | IR | Fast recovery diode |
| 302UR160PD | IR | Standard recovery diode |
| IRF7103QTR | IR | N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A |
| ST303S10MFN1L | IR | Inverter grade thyristor |
| SD153R08S15PSV | IR | Fast recovery diode |
| SD453R20S20PC | IR | Fast recovery diode |
| SD253N10S15MBV | IR | Fast recovery diode |
| IRFSL33N15D | IR | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A |
| 45LR10 | IR | Standard recovery diode |
| SD203N14S15MC | IR | Fast recovery diode |
| IRF5M5210 | IR | HEXFET power MOSFET thru-hole. BVDSS = -100V, RDS(on) = 0.07 Ohm, ID = -34A |
