Path:OKDatasheet > Semiconductor Datasheet > Hexawave Datasheet
Avainsana: Hexawave Datasheet, Hexawave Data Sheet, Hexawave Data, Hexawave Inc
Path:OKDatasheet > Semiconductor Datasheet > Hexawave Datasheet
Avainsana: Hexawave Datasheet, Hexawave Data Sheet, Hexawave Data, Hexawave Inc
Jos haluat löytää tietyn Hexawave Incdatasivu, hakuun okDatasheet osa numero tai komponentin kuvaus. Sinulle esitetään luettelo kaikista matching osien kanssa Hexawave tietoiskut. Napsauta mitä tahansa lueteltujen elektroniikkakomponentti nähdä lisää yksityiskohtia mukaan lukien kaikki tekniset tiedot.
Hexawave virallisella verkkosivustolla
| Osa Ei | Hakemus |
|---|---|
| HWS306 | GaAs MMIC SPDT switch |
| HWC34NC | 12 W C-band power FET non-via hole chip |
| HWS301 | GaAs MMIC SPDT switch |
| HWS303 | GaAs MMIC SPDT switch |
| HWL30YRA | 6 W L-band GaAs power FET |
| HWL34NC | 12 W L-band power FET non-via hole chip |
| HWF1687RA | 7.5 W L-band GaAs power FET |
| HWL34YRF | 12 W L-band GaAs power FET |
| HWL26NPA | 2 W L-band GaAs power FET |
| HWF1682RA | 20 W L-band GaAs power FET |
| HWS2352 | GaAs MMIC SPDT terminated switch |
| HWC27YC | 3.5 W C-band power FET via hole chip |
| HWL34YRA | 12 W L-band GaAs power FET |
| HWL30NPA | 2.8 W L-band GaAs power FET |
| HWS305 | GaAs MMIC SPDT switch |
| HWL30YRF | 6 W L-band GaAs power FET |
| HWL27YRA | 3.5 W L-band GaAs power FET |
| HWL27NC | 3.5 W L-band power FET via hole chip |
| HWF1686NC | 3.5 W L-band power FET non-via hole chip |
| HWL26YC | 1.7 W L-band power FET via hole chip |
| HWL23NPB | 0.7 W L-band GaAs power FET |
| HWL36YRA | 15 W L-band GaAs power FET |
| HWL32NPA | 2.8 W L-band GaAs power FET |
| HWS332 | GaAs MMIC SPDT terminated switch |
| HWL32NPA | 2.8 W L-band GaAs power FET |
| HWS332 | GaAs MMIC SPDT terminated switch |
| HWL36YRF | 15 W L-band GaAs power FET |
| HWC27NC | 3.5 W C-band power FET non-via hole chip |
Hexawave, Inc. was established in 1991 with the goal of serving the rapidly growing wireless communication industry. The company is dedicated to developing, manufacturing, and marketing a wide range of GaAs based RF products. Headquartered in Hsinchu Science-Based industrial Park, the high-tech center of Taiwan, Hexawave has a 35,000 square ft. facility, which includes a class 100 GaAs wafer fab line, assembly and testing facility.
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